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Morphology Control of Pulsed-Laser Deposited Ag Quantum Dots

Published online by Cambridge University Press:  11 February 2011

Kinuyo Machi ,
Sanshiro Nagare ,
Kenji Hamada  and
Mamoru Senna
Kinuyo Machi
Affiliation:
Nara Machinery Co., Ltd. 2–5–7, Jonanjima, Ootaku, Tokyo 143–0002, Japan
Sanshiro Nagare
Affiliation:
Nara Machinery Co., Ltd. 2–5–7, Jonanjima, Ootaku, Tokyo 143–0002, Japan
Kenji Hamada
Affiliation:
Nara Machinery Co., Ltd. 2–5–7, Jonanjima, Ootaku, Tokyo 143–0002, Japan
Mamoru Senna
Affiliation:
Faculty of Science and Technology, Keio University, 3.14–1, Hiyoshi, Yokohama, Japan
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Abstract

Self-organized Ag nanodots were deposited on Si(100) by a pulsed laser deposition method. A compact apparatus was specially developed for this purpose with Nd:YAG-laser. Factors dominating size and morphology of the nanodots were examined by systematically varying species and pressure of the gas in the deposition chamber, deposition time, and the target –substrate distance (TSD). Pulse frequency (10Hz), pulse width (8ns) and laser wavelength (266nm) were kept constant. The dot size increased with pressure in the range between 0.005Pa to 1Pa, in Ar gas. At pressures as high as 100Pa, dot size decreased again with slightly different morphology. Increasing deposition time from 3, 5, to 10min brought about an increase in the average dot size from 5±2.1nm, 9±2.4nm, 10±3.0nm, respectively, under the constant Ar pressure, 100Pa. It is particularly to be noted that decreasing TSD from 100mm to 50mm brought about an increase in the dot size from 5±2.1nm to 9±3.3nm at Ar pressure, 100Pa, and deposition time, 3min. We discuss factors making self-organized Ag nanodots, and proposed key values to evaluate homogenize of dots assembly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W3.6
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Liao, H. B., Xiao, R. F., Fu, J. S., Yu, P., Wong, G. K. L., Ping Sheng: Appl. Phys. Lett. 70, (1997), p. 1 Google Scholar
2. De, G., Tapfer, L., Catalano, M., Battaglin, G., Caccavale, F., Gonella, F., Mazzoldi, P., and Haglund, R. F. Jr,: Appl. Phys. Lett. 68, (1996), p. 3820 Google Scholar
3. Mazzoldi, P., Arnold, G. W., Battaglin, G., Bertoncello, R., Gonella, F., Nucl. Instrum. Methods Phys. Res. B 91, (1994), p. 478 Google Scholar
4. Afonso, C.N., Gonzalo, J., Serna, R., de Sande, J.C.G., Ricolleau, C., Grigis, C., Gandais, M., Hole, D.E., Townsend, P.D.: Appl. Phys. A69, (1999) S201 Google Scholar
5. Ballesteros, J.M., Serna, R., Solis, J., Afonso, C.N., Petford-Long, A.K., Osborne, D.H., Haglund, R.F. Jr,: Appl. Phys. Lett. 71 (1997), p.2445 Google Scholar
6. Sasaki, Takeshi, Koshizaki, Naoto, Yoon, Jong-Won, Beck, Kenneth M., J. Photochemistry and Photobiology A145 (2001) 11–16 Google Scholar
7. Sasaki, Takeshi, Koshizaki, Naoto, The Review of Laser Engineering vol.28, No.6 (2000) (Japanese)Google Scholar