Hostname: page-component-7bb8b95d7b-s9k8s Total loading time: 0 Render date: 2024-09-30T13:00:22.596Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphological Instability of a Sic Film During Carbonization

Published online by Cambridge University Press:  15 February 2011

C.-H. Chiu  and
L. B. Freund
C.-H. Chiu
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
L. B. Freund
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Get access

Abstract

A model is developed to understand the morphological stability of a SiC film on a Si substrate during carbonization where the Si substrate is exposed to a carbon precursor. The morphological stability is determined by considering the surface evolution along a slightly wavy film surface and film-substrate interface. The morphological evolution along the film surface is dominated by surface diffusion and along the interface by a chemical reaction. The kinetic analysis shows the stability is controlled by the film surface energy, the interface energy, the diffusion-reaction process of the carbon precursor, and the strain energy. At small wavelengths of the surface profiles, the two types of surface energy dominate, which results in stable morphology. The diffusion-reaction process dictates the surface stability at large wavelengths. The strain energy may cause the surfaces to become unstable at moderate wavelengths; the instability can be completely suppressed by the diffusion-reaction process and the film surface energy, while it is enhanced by a large value of interface energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 517
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Steckl, A. J. and Li, J. P., Thin Solid Films 216, 149 (1992).Google Scholar
2 Li, J. P. and Stecki, A. J., J. Electrochem. Soc. 142, 634 (1995).Google Scholar
3 Yoshinobu, T., Mitsui, H., Tarui, Y., Fuyuki, T., and Matsunami, H., J. Appl. Phys 72, 2006 (1992).Google Scholar
4 Cimalla, V., Karagodina, K. V., Pezoldt, J., and Eichhorn, G., Mat. Sci. Eng. B29, 170 (1995).Google Scholar
5 Mogab, C. J. and Leamy, H. J., J. Appl. Phys. 45, 1075 (1974).Google Scholar
6 Chiu, C. C. and Desu, S. B., J. Mater. Res. 8, 535 (1993).Google Scholar
7 Asaro, R. J. and Tiller, W. A., Metall. Trans. 3, 1789 (1972).Google Scholar
8 Grinfeld, M. A., J. Nonlin. Sci. 3, 35 (1993).Google Scholar
9 Gao, H., Int. J. Solids Structures 28, 703 (1991).Google Scholar
10 Freund, L. B. and Jonsdottir, F., J. Mech. Phys. Solids 41, 1245 (1993).Google Scholar
11 Chiu, C.-h. and Gao, H., Int. J. Solids Structures 30, 2983 (1993).Google Scholar
12 Chin, C.-h., Ph.D. dissertation, Stanford University, 92–130 (1995).Google Scholar
13 Chin, C.-h. and Gao, H., Mat. Res. Symp. Proc. 356, 33 (1995).Google Scholar
14 Chin, C.-h. and Gao, H., Mat. Res. Syrup. Proc. 317, 369 (1994).Google Scholar
15 Spencer, B. J. and Meiron, D. I., Acta Metall. Mater. 42, 3629 (1994).Google Scholar
16 Yang, W. H., and Srolovitz, D. J., J. Mech. Phys. Solids 42, 1551 (1994).Google Scholar
17 Jesson, D. E., Pennycook, S. J., Baribeau, J.-M., and Houghton, C. D., Phys. Rev. Lett. 71, 1774 (1993).Google Scholar
18 Ozkan, C. S., Nix, W. D., and Gao, H., Mat. Res. Soc. Syrup. 399, in press (1996).Google Scholar
19 Nix, W. D., Metall. Trans. A 20A, 2217 (1989).Google Scholar
20 Chin, C.-h. and Freund, L. B., manuscript in preparation (1996).Google Scholar