Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-19T19:38:48.316Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular-Dynamics Simulation of Thin-Film Growth

Published online by Cambridge University Press:  26 February 2011

Matthias Schneider ,
Ivan K. Schuller  and
A. Rahman
Matthias Schneider
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Ivan K. Schuller
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
A. Rahman
Affiliation:
Supercomputer Institute, School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

The epitaxial growth of thin films has been studied by molecular-dynamics computer simulation. In these simulations atoms are projected towards a temperature-controlled substrate, and the equations of motion of all atoms are solved for a given interaction potential. The calculations give insight into the microscopic structure of thin films, the dynamics of the adsorption process, and they help answer the way in which substrate temperature, form of the substrate, flux of impinging atoms, and form of the interaction potential, affect epitaxial growth. Simulations were performed for monatomic and binary systems with spherically symmetric atomic interactions, and for systems in which the atoms are interacting via a three-body potential to simulate the epitaxial growth of silicon.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 91
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] For a review see, Epitaxial Growth, edited by Matthews, J. W. (Academic Press, New York, 1975).Google Scholar
[2] See for instance, Venables, J. A., Vacuum 33, 701 (1983), and references cited therein.Google Scholar
[3] For a review see, Abraham, F. F., Adv. Phys. 35, 1 (1986).Google Scholar
[4] Schneider, M., Rahman, A. and Schuller, I. K., Phys. Rev. Lett. 55, 604 (1985).Google Scholar
[5] Schneider, M., Rahman, A. and Schuller, I. K., Phys. Rev. B 34, 1802 (1986).Google Scholar
[6] Giessen, B. C., Proc. 4th Int. Conf. on Rapidly Quenched Metals, eds., Masumoto, T. and Suzuki, K., Vol. 1 (Japan Inst. Metals, Sendai, 1982), p. 213;Google Scholar
Sommer, F., Fripan, M., Predel, B., Proc. 4th Int. Conf. on Rapidly Quenched Metals, eds., Masumoto, T. and Suzuki, K., Vol. 1 (Japan Inst. Metals, Sendai, 1982), p. 209.Google Scholar
[7] Dodson, B.W., Phys. Rev. B 33, 7361 (1986).Google Scholar
[8] Schneider, M., Schuller, I. K. and Rahman, A. (to be published).Google Scholar
[9] Stillinger, F. H. and Weber, T. A., Phys. Rev. B31, 5262 (1985).Google Scholar
[10] See for instance, Thomas, R. N. and Francombe, M. H., Appl. Phys. Lett. 11 108 (1967).Google Scholar