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Molecular Dynamics Modeling of Stress and Orientation Dependence of Solid Phase Epitaxial Regrowth

Published online by Cambridge University Press:  01 February 2011

Haoyu Lai ,
Stephen M Sea ,
Harold Kennel  and
Scott T Dunham
Haoyu Lai
Affiliation:
haoyulai@u.washington.edu, University of Washington, Electrical Engineering, Seattle, Washington, United States
Stephen M Sea
Affiliation:
stephen.m.cea@intel.com, Intel Corporation, Design and Technology Solutions, Hillsboro, Oregon, United States
Harold Kennel
Affiliation:
harold.kennel@intel.com, Intel Corporation, Design and Technology Solutions, Hillsboro, Oregon, United States
Scott T Dunham
Affiliation:
dunham@u.washington.edu, University of Washington, Electrical Engineering, Seattle, Washington, United States
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Abstract

Solid Phase Epitaxial Regrowth (SPER) is of great technological importance in semiconductor device fabrication. A better understanding and accurately modeling of its behavior are vital to the design of fabrication processes and the improvement of the device performance. In this paper, SPER was modeled by Molecular Dynamics (MD) with Tersoff potential. Extensive MD simulations were conducted to study the dependence of SPER rate on growth orientation and uniaxial stress. The results were compared with experimental data. It was concluded that MD with Tersoff potential can qualitively describe the SPER process. For a more quantitatively accurate model, a better interatomic potential are needed.

Keywords

crystal growthepitaxySi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A16-13
Copyright
Copyright © Materials Research Society 2010

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