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Modified Abrasives based on fumed SiO2 and Al2O3 for the Cu CMP Process

Published online by Cambridge University Press:  15 March 2011

D. Zeidler ,
J.W. Bartha ,
W.L ortz  and
R. Brandes
D. Zeidler
Affiliation:
University Dresden, Germany
J.W. Bartha*
Affiliation:
University Dresden, Germany
W.L ortz
Affiliation:
Degussa AG, Hanau, Germany
R. Brandes
Affiliation:
Degussa Corporation, Piscataway, N.J., USA
*
Corresponding author: J.W.Bartha, Dresden University, TUD/IHM - Mierdel-Bau, D-01062 Dresden Phone: +49 351 463 35292 Fax: +49 351 463 37172 bartha@ihm.et.tu-dresden.de
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Abstract

New abrasive particles based on SiO2 and Al2O3 were produced with different coating and doping. Seven specifically designed particles were dispersed to prepare slurries for Cu CMP. Glycin was used as complexing agent and hydrogenperoxid as oxidizer. The experimentally obtained removal rate, selectivity, surface quality and planarisation ability, demonstrate a significant impact of the different abrasives tested. SiO2 particles covered with Al2O3 increased the removal rate for Cu. In comparison to this behavior, a low rate for TaN proved a high selectivity copper removal required by the Cu CMP process. A new method for the planarisation length monitoring (step polish response) shows also significant differences in planarisation length (PL) by the polish of copper with slurries composed of these new particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 816: Symposium K – Advances in Chemical-Mechanical Polishing , 2004 , K1.6
Copyright
Copyright © Materials Research Society 2004

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References

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