Hostname: page-component-7bb8b95d7b-nptnm Total loading time: 0 Render date: 2024-09-18T20:51:59.883Z Has data issue: false hasContentIssue false
  • English
  • Français

Modelling of Heat Conduction and Thermal Stresses in Multilevel Interconnects

Published online by Cambridge University Press:  10 February 2011

Y. -L. Shen
Y. -L. Shen*
Affiliation:
Department of Mechanical Engineering, The University of New Mexico, Albuquerque, NM 87131, shenyl@slider.unm.edu
Get access

Abstract

The effects of metal Joule heating in interconnects were studied numerically. Particular attention is devoted to the multilevel nature of interconnects in modem microelectronic devices. Heat conduction analyses were carried out to quantify the temperature rise in structures composed of various levels of metal lines under different electric current densities. Two types of metallization (aluminum and copper) and two types of interlevel dielectric (silicon dioxide and polyimide) were considered. It was found that increasing the total number of metal level and/or switching the dielectric from silicon dioxide to polymer-based low-k dielectrics can cause substantial temperature increases, pointing out that interconnect Joule heating can become a major reliability threat in future applications. Thermal stresses induced by the nonuniform temperature field were also analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 177
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lee, W. W. and Ho, P. S., MRS Bulletin 22(10), 19 (1997).10.1557/S0883769400034151Google Scholar
2. Gui, X., Haslett, J.W., Dew, S.K. and Brett, M.J., IEEE Trans. Electron Devices, 45, 380 (1998).Google Scholar
3. Hunter, W. R., IEEE Trans. Electron Devices, 44, 304 (1997).10.1109/16.557721Google Scholar
4. Gui, X., Dew, S. K. and Brett, M. J., IEEE Trans. Electron Devices, 42, 1386 (1995).Google Scholar
5. Trattles, J.T., O'Neill, A.G. and Mecrow, B.C., IEEE Trans. Electron Devices, 40, 1344 (1993).Google Scholar
6. Allegretto, W., Nathan, A., Chau, K. and Baltes, H. P., Can. J Phys., 67, 212 (1989).Google Scholar
7. Gui, X., Dew, S. K. and Brett, M. J., J Vac. Sci. Technol. B, 12, 59 (1994).Google Scholar
8. Shih, W.-Y., Levine, J. and Chang, M., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, (Material Research Society, 1997), p. 479.Google Scholar
9. Incropera, F. P. and DeWitt, D. P., Introduction to Heat Transfer, 3rd Edition, Wiley, 1996.Google Scholar
10. Chung, D. D. L., Materials for Electronic Packaging, Butterworth-Heinemann, 1995.Google Scholar
11. ABAQUS, Version 5.6, Hibbit, Karlson and Sorensen, Inc., Pawtucket, Rhode Island (1997).Google Scholar
12. Shen, Y.-L., J. Mater. Res., 12, 2219 (1997).10.1557/JMR.1997.0296Google Scholar