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Modeling Silicon Implantation Damage and Transient Enhanced Diffusion Effects for Silicon Technology Development

Published online by Cambridge University Press:  15 February 2011

Martin D. Giles ,
Shaofeng Yu ,
Harold W. Kennel  and
Paul A. Packan
Martin D. Giles
Affiliation:
Intel Corp., Technology CAD Dept., Santa Clara, CA 95052-8119, mgiles@td2cad.intel.com
Shaofeng Yu
Affiliation:
Intel Corp, Technology CAD Dept., Hillsboro, OR 97125-6497.
Harold W. Kennel
Affiliation:
Intel Corp, Technology CAD Dept., Hillsboro, OR 97125-6497.
Paul A. Packan
Affiliation:
Intel Corp, Technology CAD Dept., Hillsboro, OR 97125-6497.
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Abstract

Despite more than 20 years of effort, detailed understanding of defect-coupled dopant diffusion in silicon still falls short of what is practically required to support state-of-the-art silicon technology development. The challenge for modeling in industry is to combine the best of our physical understanding with measurements of dopant profiles for technology-relevant conditions to provide models which are as predictive and efficient as possible. This paper presents experimental results which provide insight into damage generation and annealing processes and discusses practical modeling approaches to support technology development despite our incomplete understanding of the physical processes involved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 253
Copyright
Copyright © Materials Research Society 1997

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References

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