Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-20T03:03:08.152Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

Published online by Cambridge University Press:  03 September 2012

Alp H. Gencer  and
Scott T. Dunham
Alp H. Gencer
Affiliation:
Department of Electrical and Computer Engineering Boston University, Boston, MA 02215
Scott T. Dunham
Affiliation:
Department of Electrical and Computer Engineering Boston University, Boston, MA 02215
Get access

Extract

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for s{311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 27
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pan, G. Z., Tu, K.N., and Prussin, S., Appl. Phys. Lett. 68, 1654 (1996).Google Scholar
2 Eaglesham, D. J., Stolk, P.A., Gossmann, H.J., and Poate, J.M., Appl. Phys. Lett. 65, 2305 (1994).Google Scholar
3 Jones, K. S., Lui, J., Zhang, L., Krishnamoorthy, V., and DeHoff, R.T., Nuc. Inst. and Meth. B 106, 227 (1995).Google Scholar
4 Eaglesham, D. J., Stolk, P.A., Gossmann, H.J., Haynes, T.E., and Poate, J.M., Nuc. Inst. and Meth. B 106, 191 (1995).Google Scholar
5 Gencer, A. H. and Dunham, S.T., J. Appl. Phys. (1997). To appear in the January 1st, 1997 issue.Google Scholar
6 Dunham, S. T., Appl. Phys. Lett. 63, 464 (1993).Google Scholar
7 Clejan, I. and Dunham, S.T., J. Appl. Phys. 78, 7327 (1995).Google Scholar
8 Gencer, A. H.. DOPDEES User's Manual (1996).Google Scholar
9 Agarwal, A. M. and Dunham, S.T., J. Appl. Phys. 78, 5313 (1995).Google Scholar
10 Bracht, H. Stolwijk, N.A., and Mehrer, H., Phys. Rev. B 52, 16542 (1995).Google Scholar
11 Zimmermann, H. and Ryssel, H., Applied Physics A 55, 121 (1992).Google Scholar
12 Huang, R. A., Ph. D.thesis, Stanford University (1994).Google Scholar