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Modeling of Beta Conductivity in Tritiated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

Stefan Costea ,
Franco Gaspari ,
Tome Kosteski ,
Stefan Zukotynski ,
Nazir P. Kherani  and
Walter T. Shmayda
Stefan Costea
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Franco Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Tome Kosteski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Stefan Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Nazir P. Kherani
Affiliation:
Ontario Power Technologies, Toronto, Ontario, M8Z 5S4, Canada
Walter T. Shmayda
Affiliation:
Ontario Power Technologies, Toronto, Ontario, M8Z 5S4, Canada
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Abstract

The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A27.4
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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