Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-02T02:42:24.508Z Has data issue: false hasContentIssue false
  • English
  • Français

MOCVD-TiN Barrier Layers for ULSI Applications

Published online by Cambridge University Press:  25 February 2011

Ivo J. Raaijmakers ,
Raymond N. Vrtis ,
Jack Yang ,
Seshadri Ramaswami ,
Andre Lagendijk ,
David A. Roberts  and
Eliot K. Broadbent
Ivo J. Raaijmakers
Affiliation:
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134
Raymond N. Vrtis
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Jack Yang
Affiliation:
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134
Seshadri Ramaswami
Affiliation:
Advanced Micro Devices, P.O. Box 3453, Sunnyvale, CA 94088–3000
Andre Lagendijk
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
David A. Roberts
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Eliot K. Broadbent
Affiliation:
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134
Get access

Abstract

Material properties are reported of high quality TiN thin films, deposited by a low temperature (400 – 450 C) and low pressure (10 Torr) metalorganic chemical vapor deposition process using tetrakis(diethylamino)Ti and ammonia. Layer resistivities of less than 200 μΩ cm are achieved in 300 to 500 A thick films. The carbon and oxygen content in the films is found to be low (<3% C, <0.5% O). Conformality of the films in small contact holes is sufficient for the films to be applicable as diffusion barrier and adhesion layers in integrated circuit manufacturing at the 0.25 μΩgeneration.

Integration of the MOCVD-TiN films in a Ti/TiN/Al-alloy metallization scheme is also reported. The diffusion barrier performance of the MOCVD-TiN layers is found to exceed that of PVD-TiN layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 99
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kurtz, R. and Gordon, R. G., Thin Solid Films 140, 277 (1986).Google Scholar
2. Pintchovski, F., White, T., Travis, E., Tobin, P. J., and Price, J. B., in Tungsten and Other Refractory Metals for VLSI Applications IV, edited by Blewer, R. S. and McConica, C. M. (Materials Research Society, Pittsburgh 1989), p. 275.Google Scholar
3. Buiting, M. J., Otterloo, A. F., Montree, A. H., J. Electrochem. Soc. 138, 500 (1991).Google Scholar
4. Travis, E., Paulson, W. M., Pintchovski, F., Boeck, B., Panilo, L. C., Kottke, M. L., Yu, K. -Y., Rice, M. J., Price, J. B., and Eichman, E. C., IEDM Techn. Digest 1990 (IEEE, New York 1990), D. 47.Google Scholar
5. Fix, R. M., Gordon, R. G., and Hoffman, D. M., Chem. Mater. 2, 235 (1990).CrossRefGoogle Scholar
6. Fix, R. M., Gordon, R. G., and Hoffman, D. M., Chem. Mater. 3, 1138 (1991).Google Scholar
7. Musher, J. N., and Gordon, R. G., J. Electron. Mater. 20, 1105 (1991).Google Scholar
8. Mandl, M., Hoffmann, H., and Kucher, P., J. Appl. Phys. 68, 2127 (1990).Google Scholar
9. Broadbent, E. K., Chin, B. L., van de Ven, E. P., Burkhart, C. W., Benzing, J. C., and Mclnerney, E. J., in Tungsten and Other Refractory Metals for ULSI Applications in 1990, edited by Smith, G. C. and Blumenthal, R. (Materials Research Society, Pittsburgh, PA, 1989) p. 39.Google Scholar
10. Raaijmakers, I. J., Vrtis, R. N., Sandhu, G. S., Yang, J., Broadbent, E. K., Roberts, D. A., and Lagendijk, A., accepted for publication in Proc. 9th Int. IEEE VLSI Multileve Interconnection Conf., Santa Clara 1992 (IEEE, New York, 1992).Google Scholar
11. Sandhu, G. S., and Doan, T. T., in Advanced Metallization for ULSI Applications, edited by Rana, V. V. S., Joshi, R. V., and Ohdomari, I. (Materials Research Society, Pittsburgh, PA, 1992), p. 323.Google Scholar
12. Raaijmakers, I. J. and Sherman, A., Proc. 7th Int. IEEE VLSI Multileve Interconnection Conf., Santa Clara (1990) (IEEE, New York 1990), p. 219.Google Scholar
13. Itoh, T., Konno, T., Raaijmakers, I. J., and Sinclair, R., to be published.Google Scholar
14. Sherman, A. and Raaijmakers, I. J., Proc. 11th Int. Conf. on CVD 1990, 90–12. edited by Spear, K. E. and dillen, G. W. (The Electrochem. Soc, Pennington NJ, 1990), p. 374.Google Scholar
15. Bhansali, A. S., Sinclair, R., and Morgan, A. E., J. Appl. Phys. 68, 1043 (1991).Google Scholar
16. Bhansali, A. S., Raaijmakers, I. J., Sinclair, R., Morgan, A. E., Burrow, B. J., and Arst, M., in Thin Film Structures and Phase Stability, edited by Clemens, B. M. and Johnson, W. L. (Mater. Res. Soc. Symp. Proc. 187, Pittsburgh, PA, 1990), p. 15.Google Scholar
17. Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).CrossRefGoogle Scholar
18. Raaijmakers, I. J. and Kim, K. -B., J. Appl. Phys 67, 6255 (1990).CrossRefGoogle Scholar
19. Kohlhase, A., Mandl, M., and Pamler, W., J. Appl. Phys 65, 2464 (1989).Google Scholar
20. Bhansali, A. S., Raaijmakers, I. J., Sinclair, R., Morgan, A. E., Burrow, B. J., and Arst, M., submitted for publication in J. Appl. Phys.Google Scholar
21. Raaijmakers, I. J., Setalvad, T., Bhansali, A. s., Burrow, B. J., Gutai, L., and Kim, K. -B, J. Electron. Mater. 19, 1221 (1990).Google Scholar