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MOCVD of Very thin Films of Lead Lanthanum Titanate

Published online by Cambridge University Press:  10 February 2011

David B. Beach  and
Catherine E. Vallet
David B. Beach
Affiliation:
Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6197, beachdb@oml.gov
Catherine E. Vallet
Affiliation:
Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6197, beachdb@oml.gov
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Abstract

Films of lead lanthanum titanate were deposited using metal-organic chemical vapor deposition (MOCVD) at temperatures between 500 and 550°C in a hot-wall reactor. The precursors used were Pb(THD)2, La(THD)3, and Ti(THD)2(I-OPr)2where THD = 2,2,6,6-tetramethyl-3,5-heptanedionate, O2C11H19, and I-OPr = isopropoxide, OC3H7. The three precursors were delivered to the reactor using a single solution containing all three precursors dissolved in tetraglyme and the precursor solution was volatilized at 225°C. Films were deposited on Si and Si/Ti/Pt substrates, and characterized using Rutherford Backscattering Spectroscopy (RBS) and X-ray diffraction(XRD). Films deposited at 550°C had a composition which was close to that of the precursor solution while films deposited at 500°C were deficient in lanthanum. Even at 500°C, the desired perovskite phase is readily observed by XRD. Subsequent rapid thermal processing of the film deposited at 500°C showed an increase in the intensity of the X-ray lines, but did not change the width of these lines, implying that grain sizes had remained unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 225
Copyright
Copyright © Materials Research Society 1996

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References

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