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MOCVD of SrTa2O6 Thin Films for High-k Applications

Published online by Cambridge University Press:  28 July 2011

Stephan Regnery ,
Reji Thomas ,
Hans Haselier ,
Peter Ehrhart ,
Rainer Waser ,
Peer Lehnen ,
Stefan Miedl  and
Markus Schumacher
Stephan Regnery
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Reji Thomas
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Hans Haselier
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Peter Ehrhart
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Rainer Waser
Affiliation:
IFF - Institut für Festkörperforschung and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, D-52425 Jülich, Germany
Peer Lehnen
Affiliation:
AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Stefan Miedl
Affiliation:
AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Markus Schumacher
Affiliation:
AIXTRON AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
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Abstract

SrTa2O6 thin films with thickness between 6 and 150nm were deposited in a multi-wafer planetary MOCVD reactor combined with a TRIJET® liquid delivery system using a single source precursor, strontium-tantalum-(methoxyethoxy)-ethoxide dissolved in toluene. A rather narrow process window for the deposition of stoichiometric SrTa2O6 was found for this precursor at low pressures and a susceptor temperature around 500°C. Films were grown on Pt/TiO2/SiO2/Si, TiNx/Si, and SiO2/Si substrates. The as-deposited films were X-ray amorphous and could be crystallized by post-annealing at a temperature ≥700°C. The SrTa2O6 phase was dominating within a broad range of compositions (Sr/Ta: 0.4–0.7) and a perovskite type phase was observed for Sr/Ta > 0.7. The electrical properties have been investigated with MIM and MIS capacitors after sputter deposition of Pt top electrodes. The amorphous films had a relative permittivity, ε, in the range of 25–45, and low leakage currents. Crystallized films were investigated with Pt MIM capacitors. For stoichiometric SrTa2O6 the dielectric permittivity reached values of ε = 100–110, but the leakage currents were increased. Remarkably, the permittivity is not very sensitive to deviations from the exact stoichiometry of the SrTa2O6 phase (Sr/Ta: 0.40.7), but a decrease to values of ε = 30–40 is observed along with the phase transition at high Sr contents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D9.7
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Kingon, A.I., Maria, J.P., and Streiffer, S.K, Nature, 406, 1032 (2000)Google Scholar
[2] Rodriguez, M.A., Boyle, T.J., Hernandez, B.A., Talland, D.R., Vanheusden, K., J. Am. Ceram. Soc., 82, 2001 (1999)Google Scholar
[3] Lee, D.-O., Roman, P., Wu, C.-T., Mahonay, W., Horn, M., Mumbauer, P., Brubaker, M., Grant, R., Ruzyllo, J., Microelectronic Engineering, 59, 405 (2001)Google Scholar
[4] Crosbie, M. J., Wright, P.J., Davis, H.O., Jones, A.C., Leedham, T.J., O'Brien, P., Critchlow, G.W., Chem. Vap. Deposition, 5, 9 (1999)Google Scholar
[5] Chae, B.-G., Lee, W.-J., You, I.-K., Ruy, S.-O., Jung, M.-Y., Yu, B.-G., Jpn. J. Appl. Phys. 41, L729 (2002)Google Scholar
[6] Ehrhart, P., Fitsilis, F., Regnery, S., Jia, C.L., Waser, R., Schienle, F., Schumacher, M., Dauelsberg, M., Strzyzewski, P., Juergensen, H., MRS Proc, Vol. 655, CC9.4.1 (2001)Google Scholar
[7] International Centre for Diffraction Data, ICDD, powder diffraction files.Google Scholar