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MOCVD of HfO2 from Alkoxide and Alkylamide Precursors

Published online by Cambridge University Press:  11 February 2011

John L. Roberts ,
Paul A. Williams ,
Anthony C. Jones ,
Paul Marshall ,
Paul R. Chalker ,
Jamie F. Bickley ,
Hywel O. Davies  and
Lesley M. Smith
John L. Roberts
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Paul A. Williams
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Anthony C. Jones
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Paul Marshall
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Paul R. Chalker
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Jamie F. Bickley
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Hywel O. Davies
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Lesley M. Smith
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
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Abstract

The alkoxide and alkylamide complexes [Hf(mmp)4] and [Hf(NMe2)4] 2 are both promising precursors for the MOCVD of HfO2. A comparison has shown that [Hf(NMe2)4] 2 deposits oxide at lower temperatures and over a wider temperature range then [Hf(mmp)4].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N5.9
Copyright
Copyright © Materials Research Society 2003

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References

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