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Microtexture Measurements of Aluminum VLSI Metallization

Published online by Cambridge University Press:  15 February 2011

D.L. Barr ,
W.L. Brown ,
M.A. Marcus  and
M. Ohring
D.L. Barr
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974 Stevens Institute of TechnologyHoboken, NJ 07030
W.L. Brown
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974 Stevens Institute of TechnologyHoboken, NJ 07030
M.A. Marcus
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974 Stevens Institute of TechnologyHoboken, NJ 07030
M. Ohring
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974 Stevens Institute of TechnologyHoboken, NJ 07030
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Abstract

The microtexture of thin film aluminum has been studied using Electron Backscatter Diffraction (EBSD). The results indicate that, while the overwhelming majority of polycrystallite grains have a <111> fiber texture with the < 111 > axis within -5° of the surface normal, 1-2 % of the grains deposited on SiO2 show large deviations off of this axis. The off-texture grains are typically much smaller than those that are <111> textured. These observations have been made for Al(Cu) films with several different Cu concentrations and for different substrate materials. The statistical distributions of the orientations in the different cases are presented. Electrical stressing of 0.8 um Al(0.5%Cu) lines resulted in elimination of the small number of grains with off-<l 11> orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 347
Copyright
Copyright © Materials Research Society 1995

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References

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