Article contents
Microstructure of Impurity Induced Disordering at The GaAs/InGaAIP Interface
Published online by Cambridge University Press: 25 February 2011
Abstract
We present results on the analysis of the interdiffusion process of discrete GaAs layers into a semiinfinite InGaAIP halfspace using Si doping as an agent for enhanced interdiffusion. Very strong segregation and preferential bonding phenomena are observed, resulting in extensive defect formation and loss of lattice match at the virtual interface.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991
References
REFERENCES
- 1
- Cited by