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Microstructure of Impurity Induced Disordering at The GaAs/InGaAIP Interface

Published online by Cambridge University Press:  25 February 2011

R. L. Thornton ,
F. A. Ponce ,
G. B. Anderson  and
F.J. Endicott
R. L. Thornton
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
F.J. Endicott
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

We present results on the analysis of the interdiffusion process of discrete GaAs layers into a semiinfinite InGaAIP halfspace using Si doping as an agent for enhanced interdiffusion. Very strong segregation and preferential bonding phenomena are observed, resulting in extensive defect formation and loss of lattice match at the virtual interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 349
Copyright
Copyright © Materials Research Society 1991

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References

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