Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-25T16:41:09.927Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure Investigations and Structure-Property Correlations in Ferroelectric thin film Capacitors

Published online by Cambridge University Press:  10 February 2011

H. Li ,
B. Yang ,
A. Dhote ,
S. Aggarwal ,
L. Salamanca-Riba  and
R. Ramesh
H. Li
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742, Email: haoli@eng.umd.deu
B. Yang
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
A. Dhote
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
S. Aggarwal
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
L. Salamanca-Riba
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
R. Ramesh
Affiliation:
Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD 20742
Get access

Abstract

Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT/[110]LSCO/[110]Pt/[110]Ti(AI)N[110]si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 171
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dai, Xunhu, Xu, Z. and Viehland, Dwight, J. Appl. Phys. 79, 1021–1026, (1996).Google Scholar
2. Xu, Z., Kim, Myung-Ghul, Li, Jie-Fang and Viehland, Dwight, Philosophical Magzine A, 74, 395–406, (1996).Google Scholar
3. Roytburd, A.L. and Yu, Y., Ferroelectrics 144, 137 (1993).Google Scholar
4. Yang, B., Song, T.K., Aggarwal, S. and Ramesh, R., accepted by Appl. Phys. Letter.Google Scholar
5. Song, T.K., Aggarwal, S., Prakash, A.S., Yang, B., and Ramesh, R., Appl. Phys. Letter, 71, 2211–2213, 1997 Google Scholar