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Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

Published online by Cambridge University Press:  17 March 2011

Wolfhard Beyer
Wolfhard Beyer*
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

The effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A9.2
Copyright
Copyright © Materials Research Society 2001

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References

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