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Microstructure Characterization of Ferroelectric Thin Films used in Non-Volatile Memories - Optical and Scanning Electron Microscopy

Published online by Cambridge University Press:  16 February 2011

Leo N. Chapin  and
Sharon A. Myers
Leo N. Chapin
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, M/S E140, 2900 Semiconductor Drive, P.O.Box 58090, Santa Clara, CA 95052–8090
Sharon A. Myers
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, M/S E140, 2900 Semiconductor Drive, P.O.Box 58090, Santa Clara, CA 95052–8090
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Abstract

Lead zirconate titanate ferroelectric thin films have been fabricated and fully integrated with standard CMOS semiconductor technology to produce non-volatile IC memory devices, now being tested in the marketplace. Starting with an organo-metallic sol-gel and using standard IC spin-on glass and annealing technologies, perovskite type ferroelectric thin films are formed. A variety of techniques have been under study for characterizing the crystalline microstructumre of the ferroelectric layer. Presented here are observations made with optical and scanning electron microscopy, and X-ray diffraction analysis of the effects of ferroelectric composition and sinter temperatures on crystal structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 153
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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