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Microstructure and Strain in GaAs/AlGaAs MQW thin Films Bonded to Different Substrates by Eutectic Alloying

Published online by Cambridge University Press:  21 February 2011

C. H. Lin ,
H. C. Kuo ,
Y. Lu ,
H. Shen ,
J. Pamulapati ,
M. Dutta ,
J. Y. Cheng ,
F. Ren  and
J. M. Kuo
C. H. Lin
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
H. C. Kuo
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
Y. Lu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
H. Shen
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
J. Pamulapati
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
M. Dutta
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
J. Y. Cheng
Affiliation:
AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
F. Ren
Affiliation:
AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
J. M. Kuo
Affiliation:
AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
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Abstract

Research of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500Å) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 331
Copyright
Copyright © Materials Research Society 1995

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