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Microstructure and Reliability of Sputter DepositedCr-Crcu-Cu thin Films for Flip-Chip Applications

Published online by Cambridge University Press:  10 February 2011

Na Zhang ,
Mark Mcnicholas  and
Neil Colvin
Na Zhang
Affiliation:
Applications Laboratory, Materials Research Corporation, 560 Route 303, Orangeburg, NY 10962, Zhang_Nancy@ny.mrc.sony.com
Mark Mcnicholas
Affiliation:
Applications Laboratory, Materials Research Corporation, 560 Route 303, Orangeburg, NY 10962, Zhang_Nancy@ny.mrc.sony.com
Neil Colvin
Affiliation:
Applications Laboratory, Materials Research Corporation, 560 Route 303, Orangeburg, NY 10962, Zhang_Nancy@ny.mrc.sony.com
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Abstract

The Cr‐CrCu‐Cu metal scheme, as a terminal multistructure metallization for flip chip applications, has been investigated utilizing PVD sputter deposition varying the conditions of deposition power and temperature, and film thickness. A modified Controlled Collapse Chip Connection (C4) process was utilized in order to evaluate the aforementioned deposition of the Cr‐CrCu‐Cu multilayers and the effect of film microstructure on the parameters of shear strength and thermal cycle reliability. Thermal cycle reliability results proved to be a function of both the CrCu alloy and the Cu overlayer thickness. Transmission electron microscopy (TEM) cross‐sections of the Cr‐CrCu‐Cu multilayers suggests that the columnar grain structure of the CrCu layer may provide a sacrificial thermal diffusion barrier between the PbSn alloy solder balls and the Al bond pads during the thermal‐cycle tests.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 445: Electronic Packaging Materials Science IX , 1996 , 9
Copyright
Copyright © Materials Research Society 1997

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