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Microstructure and optical properties of GaN films grown on porous SiC substrate by MBE

Published online by Cambridge University Press:  01 February 2011

F. Yun ,
M. A. Reshchikov ,
L. He ,
T. King ,
D. Huang ,
H. Morkoç ,
C. K. Inoki  and
T. S. Kuan
F. Yun
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
L. He
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
T. King
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
D. Huang
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
H. Morkoç
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
C. K. Inoki
Affiliation:
Univ at Albany, SUNY, Dept of Physics, Albany, NY 12222
T. S. Kuan
Affiliation:
Univ at Albany, SUNY, Dept of Physics, Albany, NY 12222
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Abstract

GaN thin films were grown on porous SiC substrates using reactive molecular beam epitaxy with ammonia as the nitrogen source. Microstructure analysis and optical characterization were performed to assess the quality of the effect of pores on the growth and the quality of the GaN films. Results indicate that the GaN films on porous SiC are slightly less defective and more strain-relaxed (some completely relaxed) when grown on porous SiC substrate, as compared to growth on standard 6H-SiC substrates. Rocking curve FWHMs of 3.3 arcmin for (0002) diffraction and 13.7 arcmin for (1012) diffraction were obtained for sub-micron thick GaN films. Excitonic transition with FWHM as narrow as 9.5 meV was observed at 15K on the GaN layer grown on porous SiC without a skin layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F1.3
Copyright
Copyright © Materials Research Society 2002

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