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Microstructural Evolution Of The Initial Phase Formation Of Cobalt Silicide With An Ultra-Thin Titanium Layer

Published online by Cambridge University Press:  01 February 2011

Kevin D. Johnson ,
Kian Sin Sim ,
Huicheng Chang ,
Julie Tsai  and
Zhiyong Ma
Kevin D. Johnson
Affiliation:
Intel Corporation, Hillsboro, OR, U.S.A.
Kian Sin Sim
Affiliation:
Intel Corporation, Penang, Malaysia
Huicheng Chang
Affiliation:
Intel Corporation, Hillsboro, OR, U.S.A.
Julie Tsai
Affiliation:
Intel Corporation, Hillsboro, OR, U.S.A.
Zhiyong Ma
Affiliation:
Intel Corporation, Hillsboro, OR, U.S.A.
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Abstract

Inserting a titanium layer between cobalt and silicon can control the phase formation sequence for cobalt silicide. In this study we show that sputtered Ti combines with surface oxide to form a stable permeable membrane <20Å thick. Below 500°C, the restricted diffusion of Co and Si through this interlayer allows Co2Si and CoSi2 to form above and below the interlayer, respectively. Because the interlayer is very thin, the type of substrate doping dominates the reaction sequence at higher temperatures. Given sufficient cobalt supply, at 500-600°C the initial phases transform to CoSi for an n-type Si substrate. For a p-type substrate the Co2Si phase converts to CoSi while the bottom CoSi2 phase remains stable. Above 650°C, the deposited cobalt fully converts to the final CoSi2 phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B8.9
Copyright
Copyright © Materials Research Society 2002

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