Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-25T01:10:10.527Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Characterization of Porous Silicon SOI Structures

Published online by Cambridge University Press:  28 February 2011

J.D. L'ecuyer ,
M.H. Loretto ,
J.P.G. Farr ,
J.M. Keen ,
J.G. Castledine  and
G. L'esperance
J.D. L'ecuyer
Affiliation:
Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, U.K.
M.H. Loretto
Affiliation:
Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, U.K.
J.P.G. Farr
Affiliation:
Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, U.K.
J.M. Keen
Affiliation:
Roya1 Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, U.K.
J.G. Castledine
Affiliation:
Roya1 Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, U.K.
G. L'esperance
Affiliation:
Departement de Genie Metallurgique, Ecole Polytechnique, C.P. 6079, Succ. “A”, Montreal, H3C 3A7, Canada
Get access

Abstract

SOI structures up to 60nm wide have been produced using oxidized porous silicon formed by selective n/n+ anodizing. The microstructures of the islands were investigated using TEM in both the planar and cross-section geometries. Typical island thickness is about 0.15nm and the buried oxidized porous silicon about 0.65μm. Retention of the island geometry is excellent. Few defects (essentially dislocations) are associated with either the anodizing or oxidation treatments. The interface sharpness between the epitaxial silicon/oxidized porous silicon is 10-20nm, an order of magnitude sharper than the back interface between the oxidized porous silicon and the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 441
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Imai, K., Solid-St. Electron. 24, 159 (1981).CrossRefGoogle Scholar
2 Imai, K. and Yoriume, Y., JapanT. Appl. Phys. 18, 281 (1979).Google Scholar
3 Chi, J.Y., Holmstrom, R.P. and Mao, B.Y., Appl. PTfys. Lett. 40, 420 (1982).CrossRefGoogle Scholar
4 Holmstrom, R.P. and Chi, J.Y., Appl. Phys. Lett. 42, 387 (1983).CrossRefGoogle Scholar
5 Bomchil, G., private communication.Google Scholar
6 Zorinsky, E.J., Spratt, D.B. and Virkus, R.L., IEEE 1986 Electron Device Conference, Los Angeles, Ca., IEDM Technical Digest, 1986, p.431.Google Scholar
7 Razouk, R.R., Lie, L.N. and Deal, B.E., J. Electrochem. Soc. 128, 2214 (1981).CrossRefGoogle Scholar
8 Brumhead, D. et al. , in ESSDERC 87, 17th European Solid State Device Research Conference, Bologna, Italy, edited by Calzolari, R.V. and Soncini, G., 1987, p.391.Google Scholar
9 Yon, J.J., Ph.D. thesis, Universite scientifique, technologique et medicale de Grenoble, 1986.Google Scholar
10 Barla, K., Yon, J.J., Herino, R. and Bomchil, G., in Insulating Films on Semiconductors, edited by Simonne, J.J. and Buxo, J. (Elsevier Science Publishers, North Holland, 1986), p.53.Google Scholar