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Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy

Published online by Cambridge University Press:  21 March 2011

Hyonju Kim ,
T. G. Andersson ,
U. Södervall ,
C. Jäger ,
W. Jäger ,
M. Albrecht ,
G. Bösker  and
N. A. Stolwijk
Hyonju Kim
Affiliation:
Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden
T. G. Andersson
Affiliation:
Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden
U. Södervall
Affiliation:
Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden
C. Jäger
Affiliation:
Technische Fakultaet, Christian-Albrechts-Universitaet zu Kiel, Kaiserstr. 2, D-24143 Kiel, Germany
W. Jäger
Affiliation:
Technische Fakultaet, Christian-Albrechts-Universitaet zu Kiel, Kaiserstr. 2, D-24143 Kiel, Germany
M. Albrecht
Affiliation:
Universitaet Erlangen-Nuernberg, Institut fuer Werkstoffwissenschaften, Lehrstuhl Mikrocharakterisierung Cauerstr.6, 91058 Erlangen, Germany
G. Bösker
Affiliation:
Institut fur Metallforschung, Universität Munster, D-48149 Munster, Germany
N. A. Stolwijk
Affiliation:
Institut fur Metallforschung, Universität Munster, D-48149 Munster, Germany
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Abstract

We have investigated microstructural properties of GaAs:N and GaN:As layers using transmission electron microscopy. The samples were grown onto (001)-oriented GaAs substrates by RF-plasma assisted molecular beam epitaxy. It has been found that during the GaAs/GaAs:N epitaxial growth the supplied active nitrogen atoms gave rise to nanometer-size GaN crystallites formed in the GaAs matrix. In addition, silicon incorporation showed abnormal behavior at the two interfaces of the thin GaAs:N layer embedded in GaAs. A model is proposed for the formation of GaN crystallites in GaAs during the growth. In the GaN:As growth, the layer exhibited columnar growth, resulting in domains with different crystallographic orientation. With an increase of the film thickness, the zincblende structure changed to the wurtzite phase of GaN. The distribution of arsenic through the layer thickness was found to be inhomogeneous and be much higher near the GaN/GaAs interface compared to the region near the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.32.1
Copyright
Copyright © Materials Research Society 2002

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