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Microstructural and Dielectrical Properties for Ceramics and Thin Films of the xPbTiO3-(1−x)SrTiO3 Solid Solution

Published online by Cambridge University Press:  17 March 2011

E. Martínez ,
A. Fundora ,
O. Blanco ,
S. García ,
E. Heredia  and
J. M. Siqueiros
E. Martínez
Affiliation:
Centro de Investigación Científica y Educación Superior de Ensenada, CICESE, Ensenada, B.C., México, 22800
A. Fundora
Affiliation:
Facultad de Física–IMRE, Universidad de la Habana, Vedado, La Habana 10400, Cuba
O. Blanco
Affiliation:
Centro de Investigación Científica y Educación Superior de Ensenada, CICESE, Ensenada, B.C., México, 22800
S. García
Affiliation:
Facultad de Física–IMRE, Universidad de la Habana, Vedado, La Habana 10400, Cuba
E. Heredia
Affiliation:
Facultad de Física–IMRE, Universidad de la Habana, Vedado, La Habana 10400, Cuba
J. M. Siqueiros
Affiliation:
Centro de Ciencias de la Materia Condensada, UNAM, Ensenada, B.C., 22800, México
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Abstract

SrTiO3 and PbTiO3 perovskites are combined to form the xPbTiO3-(1−x)SrTiO3 (PST) solid solution. The effect of the PbTiO3 content on the microstructural and dielectric properties is studied for different compositions (x=0.1,0.3,0.5,0.7, and 0.9). Microstructural features of the PST system are studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques. Electrical properties are studied by the thermoelectric analysis technique at both fixed frequency and varying frequency to study the behavior of the dielectric constant and dielectric loss.Films of 0.5PbTiO3-0.5SrTiO3 (PST50) have been obtained by RF ion sputtering on different substrates. We investigate the relation between the crystalline structure and the dielectric properties of PST50 films deposited on different metallic films. Scanning Electron Microscopy (SEM) and X-Ray Diffraction were used for the structural analysis of the PST50/TiN/Si and PST50/RuO2/TiN /Si systems. The dielectric properties of the PST50 films were measured for TiN/PST50/TiN/Si, and RuO2/PST50/RuO2/TiN/Si capacitors and the results were correlated to the structure and composition. The charge storage capabilities of the PST50 films are evaluated for possible application in integrated circuit technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.34.1
Copyright
Copyright © Materials Research Society 2002

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