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Microscopic Characterization of Polycrystalline APCVD CdTe Thin Film PV Devices

Published online by Cambridge University Press:  21 March 2011

Tim R. Ohno ,
Eli Sutter ,
James M. Kestner ,
A.S. Gilmore ,
Victor Kaydanov ,
Colin A. Wolden ,
Peter V. Meyers ,
Lawrence Woods ,
Manuel J. Romero  and
M.M. Al-Jassim
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Tim R. Ohno
Affiliation:
Colorado School of Mines, Golden, CO 80401
Eli Sutter
Affiliation:
Colorado School of Mines, Golden, CO 80401
James M. Kestner
Affiliation:
Colorado School of Mines, Golden, CO 80401
A.S. Gilmore
Affiliation:
Colorado School of Mines, Golden, CO 80401
Victor Kaydanov
Affiliation:
Colorado School of Mines, Golden, CO 80401
Colin A. Wolden
Affiliation:
Colorado School of Mines, Golden, CO 80401
Peter V. Meyers
Affiliation:
ITN Energy Systems, 8130 Shaffer Parkway, Littleton, CO 80127 presently at First Solar LLC, 12900 Eckel Junction Road, Perrysburg, OH 43551
Lawrence Woods
Affiliation:
ITN Energy Systems, 8130 Shaffer Parkway, Littleton, CO 80127
Manuel J. Romero
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
M.M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
Steve Johnston
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

Atmospheric pressure chemical vapor deposition (APCVD) is being studied as an alternative for large-area manufacturing of CdTe thin films. High efficiency research cells have been constructed, but the fundamental materials properties and limitations have not been fully explored. APCVD material is examined with several techniques and compared with close-space sublimation (CSS). Transmission and scanning electron microscopy studies show a similar morphology to CSS CdTe. However high resolution TEM scans show the formation of a disordered layer between the CdTe and CdS, and the removal of defects within some grain structures upon annealing. Cathodoluminescence shows electronic defect states localized to grain boundaries. A large concentration of trap states was also observed with deep-level transient spectroscopy that may correspond to hole traps found in lower amounts in other materials. The presence of traps was also indicated in impedance spectroscopy measurements. The latter studies indicate a high grain boundary resistance contributes to transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H6.5
Copyright
Copyright © Materials Research Society 2001

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References

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