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Micromachining Techniques for Advanced SiC MEMS

Published online by Cambridge University Press:  21 March 2011

Mehran Mehregany  and
Christian A. Zorman
Mehran Mehregany
Affiliation:
Department of Electrical Engineering and Computer Science Case Western Reserve University Cleveland, Ohio 44106
Christian A. Zorman
Affiliation:
Department of Electrical Engineering and Computer Science Case Western Reserve University Cleveland, Ohio 44106
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Abstract

This paper reviews the development of a multilayer, micromolding-based surface micromachining process for SiC microelectromechanical systems (MEMS). The micromolding process uses polysilicon and SiO2 thin films that are deposited onto polysilicon and SiO2 sacrificial layers, patterned into micromolds by reactive ion etching, filled with polycrystalline SiC (poly-SiC), planarized by mechanical polishing, and eventually dissolved and released in selective wet chemical etchants. In addition, a SiC lift-off technique that exploits the microstructural differences between SiC films deposited on Si, SiO2 and Si3N4 surfaces has been developed. The micromolding and lift-off techniques are being used as the basic patterning processes for a four-layer, poly-SiC surface micromachining process that we call the MUSiC (Multi-User SiC) process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H4.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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