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Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Jiawei Li ,
Zheng Gong ,
Changqing Chen ,
Vinod Adivarahan ,
Mikhail Gaevski ,
Edmundas Kuokstis ,
Maxim Shatalov ,
Ying Gao ,
Zehong Zhang  and
Arul Arjunan
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Jiawei Li
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Zheng Gong
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Changqing Chen
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Vinod Adivarahan
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Mikhail Gaevski
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Edmundas Kuokstis
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Maxim Shatalov
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Ying Gao
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Zehong Zhang
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Arul Arjunan
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
T. S. Sudarshan
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
H. Paul Maruska
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
Jinwei Yang
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
M. Asif
Affiliation:
Khan Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
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Abstract

We report progress in growing non-polar a-plane III-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride films may result over a-plane SiC substrates. By migration enhanced metalorganic chemical vapor deposition (MEMOCVD), an atomically smooth (1120)AlN layer with RMS roughness of 0.3nm was obtained. From the results of XRD, the structural defects in the AlN layer on SiC substrates were strongly reduced compared to those grown on r-plane sapphire. Also by applying our selective area lateral epitaxy (SALE) growth procedure, we achieved high structural and optical quality a-plane GaN films on 4H-SiC with RMS roughness only 0.4nm. Therefore, non-polar III-nitride films and heterostructures on SiC substrates are promising building blocks for realizing high performance polarization-free devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E2.9
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Lefebvre, P., Gil, B., Allegre, J., Mathieu, H., Grandjean, N., Leroux, M., Massies, J., Bigenwald, P., MRS Internet J. Nitride Semic. Res., 4S1, G3.69 (1999)Google Scholar
2. Nishida, T. and Kobayishi, N., phys stat solidi, 176, 45 (1999).Google Scholar
3. Ng, H. M., Appl. Phys. Lett. 80, 4369 (2002).Google Scholar
4. Craven, M. D., Lim, S. H., Wu, F., Speck, J. S., and DenBaars, S. P., Appl. Phys. Lett. 81, 1201 (2002).Google Scholar
5. Sun, W. H., Yang, J. W., Chen, C. Q., Zhang, J. P., Gaevski, M. E., Kuokstis, E., Adivarahan, V., Wang, H. M., Gong, Z., Su, M., and Asif Khan, M., Appl. Phys. Lett. 83, 2599 (2003).Google Scholar
6. Chen, C. Q., Adivarahan, V., Yang, J. W., Shatalov, M., Kuokstis, E., and Asif Khan, M., Jpn. J. Appl. Phys., 42, L1039 (2003).Google Scholar
7. Sasaki, T. and Zembutsu, S., J. Appl. Phys, 61, 2533 (1987).Google Scholar
8. Elwell, D., Feigelson, R. S., Simkins, M. M., Tiller, W. A., J. Crystal Growth, 66, 45 (1984)Google Scholar
9. Craven, M. D., Lim, S. H., Wu, F., Speck, J. S., DenBaars, S. P., Appl Phys Lett, 81, 469 (2002)Google Scholar
10. Craven, M. D., Wu, F., Chakraborty, A., Imer, B., Mishra, U. K., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 84, 1281 (2004).Google Scholar
11. Onojima, N., Suda, J., and Matsunami, H., Jpn. J. Appl. Phys., 41, L1348 (2002).Google Scholar
12. Onojima, N., Suda, J., Kimoto, T., and Matsunami, H., Appl. Phys. Lett. 83, 5208 (2003).Google Scholar
13. Weeks, T. W., Bremser, M. D., Ailey, K. S., Carlson, E., Perry, W. G., Davis, R. F., Appl. Phys. Lett., 67, 401 (1995).Google Scholar
14. Zhang, J. P., Kuokstis, E., Fareed, Q., Wang, H. M., Yang, J. W., Simin, G., Asif Khan, M., Gaska, R., and Shur, M., Appl. Phys. Lett. 79, 925 (2001)Google Scholar
15. Wang, H., Chen, C. Q., Gong, Z., Zhang, J., Gaevski, M., Su, M., Yang, J., and Asif Khan, M., Appl. Phys. Lett. 84, 499 (2004).Google Scholar
16. Kuokstis, E., Zhang, J., Fareed, Q., Yang, J. W., Simin, G., and Asif Khan, M., Appl. Phys. Lett. 81, 2755 (2002).Google Scholar
17. Tamulaitis, G., Yilmaz, I., Shur, M. S., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Asif Khan, M., Schujman, S. B., Schowalter, L. J., Appl. Phys. Lett. 83, 3507 (2003).Google Scholar