Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T11:48:05.479Z Has data issue: false hasContentIssue false
  • English
  • Français

Metallurgical Study of Contacts to Gallium Nitride

Published online by Cambridge University Press:  21 February 2011

S.E. Mohney ,
B.P. Luther ,
T.N. Jackson  and
M.A. Khan
S.E. Mohney
Affiliation:
Department of Materials Science and Engineering
B.P. Luther
Affiliation:
Department of Electrical EngineeringThe Pennsylvania State University, University Park, PA 16802
T.N. Jackson
Affiliation:
Department of Electrical EngineeringThe Pennsylvania State University, University Park, PA 16802
M.A. Khan
Affiliation:
APA Optics, Blaine, MN 55449
Get access

Abstract

Thermally stable contacts to GaN that also have desirable electrical characteristics are required for the further development of optoelectronic and high temperature devices based on GaN. To make improvements on existing contacts or to develop new ones, information on the metallurgy of potential contact systems is needed. In this work, the Metal-Ga-N ternary phase equilibria and the contact metallurgy are examined for Ti, Re, and Ni. Annealed contacts of these metals have been examined with x-ray diffraction and/or x-ray photoelectron spectroscopy, and the observed metallurgical reactions are discussed in light of estimated or experimentally determined Metal-Ga-N phase diagrams. Particular attention is paid to the gas phase equilibria and the role of the annealing environment on the metallurgical reactions. Finally, the consequences of this work for the design of thermally stable contacts are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 843
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Sands, T., J. Metals 38, 31 (1986).Google Scholar
2 Lince, J.R. and Williams, R.S., Thin Solid Films 137, 251 (1986).Google Scholar
3 Beyers, R., Kim, K.B., and Sinclair, R., J. Appl. Phys. 61, 2195 (1987).Google Scholar
4 Lin, J.-C., Hsieh, K.-C, Schulz, K. J., and Chang, Y. A., J. Mater. Res. 3, 148 (1988).Google Scholar
5 Mohney, S. E. and Lin, X., submitted to J. Electon. Mater. Google Scholar
6 Jeitschko, W., Nowotny, H., and Benesovsky, F., Mh. Chem. 95, 178 (1964).Google Scholar
7 Jeitschko, W., Nowotny, H., and Benesovsky, F., Mh. Chem. 95, 156 (1964).Google Scholar
8 Jeitschko, W., Nowotny, H., and Benesovsky, F., Mh. Chem. 95, 1212 (1964).Google Scholar
9 Boiler, H., Mh. Chem. 102, 431 (1971).Google Scholar
10 Toth, L.E., Transition Metal Carbides and Nitrides, edited by Margrave, J.L. (Academic Press, New York, 1971).Google Scholar
11 Fomenko, V. S. and Samsonov, G.V., Handbook of Thermionic Properties (Plenum Press Data Division, New York, 1966).Google Scholar
12 Foresi, J.S. and Moustakas, T.D., Appl. Phys. Lett. 62, 2859 (1993).Google Scholar
13 Kurtin, S., McGill, T.C., and Mead, C.A., Phys. Rev. Lett. 22, 1433 (1969).Google Scholar
14 Jan, C.-H., Ph.D. Thesis, University of Wisconsin-Madison (1990).Google Scholar
15 Stadelmaier, H.H., Z. Metallkde. 52, 758 (1961).Google Scholar
16 Pratt, J.N. and Bird, J.M., J. Phase Equilibria 14, 465 (1993).Google Scholar
17 Karpinski, J. and Porowski, S., J. Cryst. Growth 66, 11 (1984).Google Scholar
18 Bermudez, V.M., Kaplan, R., Khan, M.A., and Kuznia, J.N., Phys. Rev. B 48, 2436 (1993).Google Scholar