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Mechanism of Electron Injection During the Anodic Oxidation of Silicon

Published online by Cambridge University Press:  28 February 2011

J.-N. Chazalvel  and
F. Ozanam
J.-N. Chazalvel
Affiliation:
Laboratoire PMC, Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, France.
F. Ozanam
Affiliation:
Laboratoire PMC, Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, France.
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Abstract

n-Si photoanodes have been found to exhibit photocurrent multiplication during the first seconds of exposure to a fluoride-free, acidic electrolyte. This shows that, in contrast with earlier hypotheses, photocurrent doubling is not directly related to the presence of fluoride in the electrolyte, but rather must arise from an electron injection mechanism associated with the Si-H bonds initially present at the Si surface. It also suggests that the electroluminescence which has been observed during the anodic oxidation of porous silicon most probably stems from the same electron-injection mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 359
Copyright
Copyright © Materials Research Society 1993

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