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Mechanism of Cr Diffusion in GaAs

Published online by Cambridge University Press:  26 February 2011

S. Yu ,
T. Y. Tan  and
U. Gösele
S. Yu
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
U. Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
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Abstract

Diffusion of substitutional Cr atoms (Crs) in GaAs results from the rapid migration of interstitial Cr atoms (Cri) and their subsequent changeover to occupy Ga sites (or vise versa), a typical substitutional-interstitial diffusion (SID) process. There are two possible ways for the Cri-Crs changeover to occur: the kick-out mechanism in which Ga self-interstitials are involved, and the dissociative mechanism in which Ga vacancies are involved. The Crs indiffusion profiles are of characteristic shapes indicating the dominance of the kick-out mechanism, while the Crs outdiffusion profiles are error-function shaped, indicating the dominance of the dissociative mechanism. In this study, an integrated SID mechanism, which takes into account the effects of both the kick-out and dissociative mechanisms, is used to analyze Cr diffusion results. Going beyond just qualitative consistency, the Cr in- and outdiffusion features in GaAs are explained on a quantitative basis. In this model the kick-out mechanism dominates Cr indiffusion while the dissociative mechanism dominates Cr outdiffusion. Parameters used to fit existing experimental results provided quantitative information on the Ga self-interstitial contribution to the Ga self-diffusion coefficient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 747
Copyright
Copyright © Materials Research Society 1992

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References

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