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Mbe Growth of High Quality (111)B GaAs, GaInAs, and AlInAs

Published online by Cambridge University Press:  28 February 2011

P. Harshman ,
K.J. Malloy ,
J. Walker ,
J.S. Smith  and
S. Wang
P. Harshman
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
K.J. Malloy
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
J. Walker
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
J.S. Smith
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
S. Wang
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
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Abstract

Growth of (111)B oriented GaAs, GaInAs, and AlInAs by MBE was investigated through a study of surface morphology, R.HEED patterns, and photoluminescence. Considering growth on both nominally oriented and 2 ° mis-oriented (111)B GaAs substrates, we have found that MBE growth in the (111)B direction proceeds quite differently than (100) growth. Except in the case of high substrate temperature growth on nominally oriented (111)B substrates, the growth of (111)B GaAs and GaInAs results in films which are characterized by macroscopically rough or faceted surfaces and by weak photoluminescence. We demonstrate that the surface morphology of these macroscopically rough films may be dramatically improved by growing with modulated Ga and In fluxes. Also, we find that AlAs and Al-containing alloys grow much more smoothly than GaAs on the (111)B surface. We report an AlAs/Al.5In.5As strained MQW structure which exhibits both good surface morphology and good photoluminescence spectra. Growth mechanisms which may explain the observed differences between (111)B and (100) MBE growth are proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 265
Copyright
Copyright © Materials Research Society 1990

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References

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