Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-23T16:21:37.704Z Has data issue: false hasContentIssue false
  • English
  • Français

Mapping of Surface Residual Stress Field by Laser Interferometry Using Stress Relaxation Method

Published online by Cambridge University Press:  11 February 2011

Dong-Won Kim ,
Nak-Kyu Lee ,
Kyung-Hoan Na  and
Dongil Kwon
Dong-Won Kim
Affiliation:
National Research Lab. for Nano Assessment & MicroReliability, School of Materials Science and Engineering, Seoul National University, San 56–1, Shilim-dong, Kwanak-Gu, 151–742, Seoul, Korea.
Nak-Kyu Lee
Affiliation:
National Research Lab. for Nano Assessment & MicroReliability, School of Materials Science and Engineering, Seoul National University, San 56–1, Shilim-dong, Kwanak-Gu, 151–742, Seoul, Korea.
Kyung-Hoan Na
Affiliation:
Micro Machining Technology Team, Industrial Technology Center, Korea Institute of Industrial Technology, 539–1, Gajwa3dong, Seogu, 404–253, Incheon City, Korea.
Dongil Kwon
Affiliation:
National Research Lab. for Nano Assessment & MicroReliability, School of Materials Science and Engineering, Seoul National University, San 56–1, Shilim-dong, Kwanak-Gu, 151–742, Seoul, Korea.
Get access

Abstract

Based on the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI), we modeled the relaxed stress in annealing, the thermal strain/stress and the residual stress field in case of both single and film/substrate systems by using the thermo-elastic theory and the relationship between relaxed stresses and displacements. Thus we mapped the surface residual stress fields on the indented bulk Cu and the 0.5μm Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -800 MPa to 700 MPa and -600 MPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y8.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kämpfe, Bernd, Materials Science and Engineering A, Vol. 288, No. 2, 2000, pp. 119–125.Google Scholar
2. Webster, G. A. and Wimpory, R. C., Journal of Materials Processing Technology, Vol. 117, No. 3, 2001, pp. 395–399.Google Scholar
3. Gauthier, J., Krause, T. W. and Atherton, D. L., NDT & E International, Vol. 31, No. 1, 1998, pp. 23–31.Google Scholar
4. Fricke, S., Keim, E. and Schmidt, J., Nuclear Engineering and Design, Vol. 206, No. 2–3, 2001, pp. 139–150.Google Scholar
5. Timoshenko, P. and Goodier, J. N., Theory of elasticity (3rd-ed), McGraw-Hill International Editions, 1970, pp. 433–484.Google Scholar