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Magnetron-Sputtered Metal-Amorphous Silicon Interfaces

Published online by Cambridge University Press:  15 February 2011

W. W. Anderson
Affiliation:
Lockheed Research Laboratory, Palo Alto, CA (U.S.A.)
J. L. Crowley
Affiliation:
Lockheed Research Laboratory, Palo Alto, CA (U.S.A.)
A. D. Jonath
Affiliation:
Lockheed Research Laboratory, Palo Alto, CA (U.S.A.)
H. F. Macmillan
Affiliation:
Lockheed Research Laboratory, Palo Alto, CA (U.S.A.)
W. G. Opyd
Affiliation:
Lockheed Research Laboratory, Palo Alto, CA (U.S.A.)
J. A. Thornton
Affiliation:
Telic Corporation, Santa Monica, CA (U.S.A.)
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Extract

Large-area platinum and palladium Schottky barrier solar cells with diode quality factors approaching unity have been fabricated on magnetron-sputterdeposited hydrogenated amorphous silicon (a-Si:H). Measured optical band gaps and barrier heights are comparable with those obtained on glow-dischargeproduced a-Si:H but open-circuit voltages are lower. High surface defect densities are suggested to be responsible for the decrease in Voc.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Tomlin, S. G., Br. J. Appl. Phys. (J. Phys. D), 1 (1968) 1667.CrossRefGoogle Scholar
2 Thompson, M. J., Johnson, N. M., Nemanich, R. J. and Tsai, C. C., Appl. Phys. Lett., 39 (1981) 274.CrossRefGoogle Scholar
3 Sze, S. M., Physics of Semiconductor Devices, Wiley-Interscience, New York, 1969, Chap. 8.Google Scholar
4 Thornton, J. and Hoffman, D., J. Vac. Sci. Technol., 18 (1981) 203.CrossRefGoogle Scholar
5 Wronski, C. R. and Carlson, D. E., in Spear, W. E. (ed.), Amorphous and Liquid Semiconductors, Proc. 7th Int. Conf. on Amorphous and Liquid Semiconductors, 1977, University of Edinburgh, Edinburgh, 1977, p. 453.Google Scholar
6 Morel, D. L. and Moustakas, T. D., Appl. Phys. Lett., 39 (1981) 612.CrossRefGoogle Scholar