Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T18:39:54.235Z Has data issue: false hasContentIssue false
  • English
  • Français

Magneto-transport Properties of Gd-doped In2O3 Thin Films

Published online by Cambridge University Press:  26 February 2011

Ram Gupta ,
D. Brown ,
K. Ghosh ,
S. R. Mishra  and
P. K. Kahol
Ram Gupta
Affiliation:
ramgupta@missouristate.edu, Missouri State University, Physics, Astronomy and Materials Science, 901 South National Avenue, Springfield, MO, 65897, United States, 4178366298, 4178366226
D. Brown
Affiliation:
DBrown@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
K. Ghosh
Affiliation:
KartikGhosh@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
S. R. Mishra
Affiliation:
SRMishra@memphis.edu, The University of Memphis, Department of Physics, Memphis, TN, 38152, United States
P. K. Kahol
Affiliation:
PawanKahol@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
Get access

Abstract

Dilute Magnetic Semiconductors (DMS) are a rare group of promising materials that utilize both the electronic charge - a characteristic of semiconductor materials - and the electronic spin - a characteristic of magnetic materials. Oxide based DMS show promise of ferromagnetism (FM) at room temperature. It has been found that doping metal oxides such as ZnO, TiO2, and In2O3 with magnetic ions such as Fe, Co, Mn, and Cr produces DMS, which exhibit FM above room temperature. In2O3, a transparent opto-electronic material, is an interesting prospect for spintronics due to a unique combination of magnetic, electrical, and optical properties. High quality thin films of rare earth magnetic gadolinium (Gd) doped oxide-based DMS materials have been grown by pulsed laser deposition (PLD) technique on various substrates such as single crystal of sapphire (001) and quartz under suitable growth conditions of substrate temperature and oxygen pressure in the PLD chamber. The effect of rare earth magnetic doping on the structural and electro - magnetic properties of these films has been studied using Raman Spectroscopy, X-Ray Diffraction, Scanning Electron Microscopy, and Magneto - Transport. An X- ray diffraction study reveals that these films are single phase and highly oriented. Characteristic Raman peaks typical of indium oxide are observed at 496 and 627 cm−1. We have observed high magnetoresistance (∼18 %) at a relatively small field of 1.3 Tesla for the films with 10 % gadolinium. A detailed study of temperature and magnetic field dependent resistivity, magnetoresistance, and Hall Effect will be presented.

Keywords

laser ablationelectrical propertiesx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1032: Symposium I – Nanoscale Magnetic Materials and Applications , 2007 , 1032-I06-04
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Carvalho, C. N., Lavareda, G., Amaral, A., Conde, O., Ramos, A. R., J. Non Cryst. Solids 352 (2006) 2315.Google Scholar
2. Singh, A. V., Mehra, R. M., J. Appl. Phys. 90 (2001) 5661.10.1063/1.1415544Google Scholar
3. Lee, J. H., Lee, S. Y., Park, B. O., Mater. Sci., Eng. B 127 (2006) 267.10.1016/j.mseb.2005.10.008Google Scholar
4. Kim, H., Pique, A., Horwitz, J. S., Murata, H., Kafafi, Z. H., Gilmore, C. M., Chrisey, D. B., Thin Solid Films 377 (2000) 798.10.1016/S0040-6090(00)01290-6Google Scholar
5. Newhouse, P. F., Park, C. H., Keszler, D. A., Tate, J., Nyholm, P. S., Appl. Phys. Lett. 87 (2005) 112108.10.1063/1.2048829Google Scholar
6. Hest, H. F. A. M., Dabney, M. S., Perkins, J. D., Ginley, D. S., Thin Solids Films 496 (2006) 70.10.1016/j.tsf.2005.08.314Google Scholar
7. Minami, T., MRS Bull. 25 (2000) 38.10.1557/mrs2000.149Google Scholar
8. Hest, H. F. A. M., Dabney, M. S., Perkins, J. D., Ginley, D. S., Taylor, M. P., Appl. Phys. Lett. 87 (2005) 032111.10.1063/1.1995957Google Scholar
9. Khranovskyy, V., Grossner, U., Nilsen, O., Lazorenko, V., Lashkarev, G. V., Svensson, B. G., Yakimova, R., Thin Solid Films 515 (2006) 472.10.1016/j.tsf.2005.12.269Google Scholar
10. Zhou, X. D., Huebner, W., Appl. Phys. Lett., 79 (2001) 3512.10.1063/1.1419235Google Scholar
11. Kim, H., Horwitz, J. S., Kushto, G. P., Qadri, S. B., Kafafi, Z. H., Chrisey, D. B., Appl. Phys. Lett. 78 (2001) 1050.10.1063/1.1350595Google Scholar