Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-09-24T03:11:25.030Z Has data issue: false hasContentIssue false
  • English
  • Français

Magneto-transport Properties of Cobalt doped Indium Oxide Dilute Magnetic Semiconductors

Published online by Cambridge University Press:  26 February 2011

N. Mamidi ,
R. K. Gupta ,
K. Ghosh ,
S. R. Mishra  and
P. K. Kahol
N. Mamidi
Affiliation:
NMamidi@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
R. K. Gupta
Affiliation:
RamGupta@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
K. Ghosh
Affiliation:
KartikGhosh@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
S. R. Mishra
Affiliation:
SRMishra@memphis.edu, The University of Memphis, Department of Physics, Memphis, TN, 38152, United States
P. K. Kahol
Affiliation:
PawanKahol@missouristate.edu, Missouri State University, Department of Physics, Astronomy, and Materials Science, Springfield, MO, 65897, United States
Get access

Abstract

Recently, oxide-based dilute magnetic semiconductors (DMS) have attracted an immense research interest to the scientists due to the possibility of inducing room temperature ferromagnetism and potential uses in novel spintronic devices. In2O3, a transparent opto-electronic material, is an interesting prospect for spintronics due to its unique combination of magnetic, electrical, and optical properties. High quality thin films of Co-doped In2O3 DMS were grown on quartz substrates using pulsed laser deposition technique. All the films have been characterized using different techniques such as x-ray diffraction, Raman spectroscopy, optical transmission spectroscopy, electrical resistivity, and Hall Effect measurement. The effect of growth temperature and oxygen pressure on the electrical, magnetic, and optical properties of these films have been studied in detail. The optical transparency in all the films is high. It has been observed that the optical transparency depends on growth temperature and oxygen pressure. The electrical parameters such as resistivity, carrier concentration, and mobility strongly depend on both oxygen pressure and growth temperature. The films grown at low temperature are semiconducting in nature while the films grown at high temperature are metallic. Detailed temperature and magnetic field dependent resistivity, magnetoresistance, and Hall effect data will be presented. This work is supported by Research Corporation (award number CC6166).

Keywords

laser ablationoptoelectronicspintronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1032: Symposium I – Nanoscale Magnetic Materials and Applications , 2007 , 1032-I10-01
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Peleckis, G., Wang, X.L. and Dou, S.X., J. Mag. Mag. Mater. 301, 308 (2006).Google Scholar
2. Shim, In-Bo and Kim, C.S., J. Mag. Mag. Mater. 272–276, e1571 (2004).10.1016/j.jmmm.2003.12.1370Google Scholar
3. Kanai, Y., Jpn. J. Appl. Phys. 24, L361 (1985).10.1143/JJAP.24.L361Google Scholar
4. Tahar, R.B.H., Ban, T., Ohya, Y. and Takahashi, Y., J. Am. Ceram. Soc. 81, 321 (1998).Google Scholar
5. Hong, N.H., Sakai, J., Huong, N.T. and Brize, V., J. Mag. Mag. Mater. 302, 228 (2006).10.1016/j.jmmm.2005.09.010Google Scholar
6. Manoj, P. K., Gopchandran, K. G., Koshy, P., Vaidyan, V. K. and Joseph, B., Opt. Mater. 28, 1405 (2006).10.1016/j.optmat.2005.08.012Google Scholar
7. Khranovskyy, V., Grossner, U., Nilsen, O., Lazorenko, V., Lashkarev, G. V., Svensson, B. G. and Yakimova, R., Thin Solid Films 515, 472 (2006).10.1016/j.tsf.2005.12.269Google Scholar
8. White, W. B. and Keramidas, V. G., Spectrochim. Acta, Part A 28, 501 (1972).10.1016/0584-8539(72)80237-XGoogle Scholar
9. Rojas-Lopez, M., Nieto-Navarro, J., Rosendo, E., Navarro-Contreras, H. and Vidal, M. A., Thin Solid Films 379, 1 (2000).10.1016/S0040-6090(00)01565-0Google Scholar
10. Lee, W. E., Fang, Y.-K., Ho, J.-J., Chen, C.-Y., Chiou, L.-H., Wang, S.-J., Dai, F., Heieh, T., Tsai, R.-Y., Huang, D. and Ho, F. C., Solid State Electron. 46, 477 (2002).10.1016/S0038-1101(01)00307-0Google Scholar
11. Kim, H., Horwitz, J. S., Kushto, G. P., Qadri, S. B., Z. H. Kafafi and Chrisey, D. B., Appl. Phys. Lett. 78, 1050 (2001).10.1063/1.1350595Google Scholar
12. Yasuhiro, I. and Hirokazu, K., Appl. Surf. Sci. 169–170, 508 (2001).Google Scholar
13. Ku, D. Y., Kim, I. H., Lee, I., Lee, S. K., Lee, T. S., Jeong, J.-h., Cheong, B., Baik, Y.-J. and Kim, W. M., Thin Solid Films 515, 1364 (2006).10.1016/j.tsf.2006.03.040Google Scholar
14. Bhosle, V., Tiwari, A. and Narayan, J., J. Appl. Phys. 100, 033713 (2006).10.1063/1.2218466Google Scholar