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Magnetoresistance and Hall Effect Near the Metal-Insulator Transition of Cd1-xMnxSe
Published online by Cambridge University Press: 26 February 2011
Abstract
A large magnetoresistance was observed in n-type Cdl-xMnxSe (x ≤ 0.10) at low temperatures. The concomitant changes in the Half coefficient as a function of H were also studied. These magnetotransport effects are caused by the s-d interaction. Some specific magnetoresistance mechanisms are discussed. The most likely dominant mechanisms are related to the giant spin splitting of the conduction band.
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- Copyright © Materials Research Society 1987
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