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Magnetic properties of Mn-doped GaN, InGaN, and AlGaN

Published online by Cambridge University Press:  01 February 2011

M. L. Reed ,
E. A. Berkman ,
M. J. Reed ,
F. E. Arkun ,
T. Chikyow ,
S. M. Bedair ,
J. M. Zavada  and
N. A. El-Masry
M. L. Reed
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Raleigh, NC 27695–7911
E. A. Berkman
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7911
M. J. Reed
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7911
F. E. Arkun
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7911
T. Chikyow
Affiliation:
National Institute for Material Science (NIMS), Nanomaterial Research laboratories, Nano-assembly R.G 1–2–1 Sengen Tsukuba Ibaraki 305–0047, Japan
S. M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Raleigh, NC 27695–7911
J. M. Zavada
Affiliation:
U.S. Army Research Office, Research Triangle Park, North Carolina 27709
N. A. El-Masry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7911
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Abstract

We report on the growth and magnetic properties of single crystal Mn-doped GaN, InGaN, and AlGaN films. The III-Nitride films were grown by MOCVD, while the Mn doping was performed by solid-state diffusion of a surface Mn layer deposited by pulsed laser ablation. Mn-doped InxGa1-xN films were grown with x < 0.15, where the easy axis of magnetization rotates from in-plane to out-of-plane by changing the InxGa1-xN thickness/strain-state of the film from compressively strained to relaxed. Mn-doped AlxGa1-xN films were grown with x < 0.40 showing ferromagnetic behavior above room temperature. SQUID measurements ruled out superparamagnetism within these films. By optimizing the growth and annealing conditions of Mn-doped III-Nitrides, we have achieved Curie temperatures in the range of 228 to 500K. These ferromagnetic Mn-doped III-Nitride films exhibit hysteresis with a coercivity of 100–500 Oe. TEM analysis showed no secondary phases within these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y8.6
Copyright
Copyright © Materials Research Society 2004

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References

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