Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-24T03:57:13.995Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Temperature Sputter-Deposition of Poly-Crystal Silicon Thin-Films

Published online by Cambridge University Press:  10 February 2011

Wen-Chang Yeh  and
Masakiyo Matsumura
Wen-Chang Yeh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12-1 0-okayama, Meguro-ku, Tokyo 152–8550, Japan, wyeh@pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12-1 0-okayama, Meguro-ku, Tokyo 152–8550, Japan, wyeh@pe.titech.ac.jp
Get access

Abstract

Poly-Si films were deposited at temperatures as low as 325°C by a newly proposed method. In the proposed method, both Ni-enhanced crystallization effects and vapor-phase deposition were utilized to reduce the deposition temperature. The X-ray diffraction measurement shows that the films were (110)-oriented at temperatures among 325°C to 419°C. When the partial pressure of hydrogen gas in the deposition chamber exceeds 0.1%, crystallization was disrupted. The characteristics of TFTs and pn junction diodes showed its potential applicability to AMLCDs and sollar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 73
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ishikawa, K., Ozawa, M. and Matsumura, M., AMLCD97, p. 63 (1997).Google Scholar
2. Aoyama, T., Kawachi, G, Konishi, N., Suzuki, T., Okajima, Y, and Miyata, K., J. Electrochem. Soc. 136, p1169 (1989).Google Scholar
3. Mohri, M., Kakinuma, H., Sakamoto, M. and Sawai, H., Jpn. J Appl.Phys. 30, L779 (1989).Google Scholar
4. Lee, S.W. and Joo, S. K., IEEE Electron Device Lett. 17, p.160 (1996)Google Scholar
5. Lee, S.W., Jeon, Y C. and Joo, S. K., Appl. Phys. Lett. 66, p. 1671 (1995).Google Scholar
6. Copel, M. and Tromp, R. M., Phys. Rev. Lett. 72, p.1236 (1994).Google Scholar
7. Shirafuji, J., Matsui, H., Narukawa, A. and Inuishi, Y., Appl. Phys. Lett. 41, p.535 (1982).Google Scholar