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Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote rf Nitrogen Plasma

Published online by Cambridge University Press:  10 February 2011

Cheolsoo Sone ,
Min Hong Kim ,
Jae Hyung Yi ,
Soun Ok Heur  and
Euijoon Yoon
Cheolsoo Sone
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Min Hong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Jae Hyung Yi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Soun Ok Heur
Affiliation:
Inter-university Semiconductor Research Center, Seoul National University, Seoul 151–742, Korea
Euijoon Yoon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

We report the low-temperature growth of GaN layers on (0001) sapphire substrates by a remote plasma enhanced metal-organic chemical vapor deposition in the temperature range of 500 - 800 $C. Effects of process parameters on the growth of GaN were studied. The structural quality of GaN improved as the growth temperature increased and the rf power decreased. Highly oriented GaN layers could be deposited at fairly low temperatures such as 500 $C under low rf power with low growth rate conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 95
Copyright
Copyright © Materials Research Society 1997

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References

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