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Low-Resistance Electrical Contacts to p-Type GaN by Using InxGa1-xN Cap Layers

Published online by Cambridge University Press:  21 March 2011

Th. Gessmann ,
Y.-L. Li ,
J. W. Graff ,
E. F. Schubert  and
J. K. Sheu
Th. Gessmann
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, U.S.A.
Y.-L. Li
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, U.S.A.
J. W. Graff
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, U.S.A.
E. F. Schubert
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, U.S.A.
J. K. Sheu
Affiliation:
Optical Science Center, National Central University, Chung-Li 32054, Taiwan, R.O.C.
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Abstract

A novel type of low-resistance ohmic contacts is demonstrated utilizing polarization-induced electric fields in thin p-type InGaN layers on p-type GaN. An increase of the hole tunneling probability through the barrier and a concomitant significant decrease of the specific contact resistance can be attributed to a reduction of the tunneling barrier width in the InGaN capping layers due to the polarization-induced electric fields. The specific contact resistance of Ni (10 nm) / Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2 × 10-2 Ω cm2 and 6 × 10-3 & cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.35.1
Copyright
Copyright © Materials Research Society 2002

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