Hostname: page-component-68945f75b7-tmfhh Total loading time: 0 Render date: 2024-08-06T04:38:06.281Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Angle and High-Angle Grain Boundaries in AIN/GaN Layers Grown on (0001) Sapphire by MBE

Published online by Cambridge University Press:  10 February 2011

V. Potin ,
P. Ruterana ,
A. Hairie  and
G. Nouet
V. Potin
Affiliation:
Laboratoire d'Etudes et de Recherche sur les Matériaux, upresa cnrs 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France, valerie @ leriris1.ismra.fr
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherche sur les Matériaux, upresa cnrs 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France, valerie @ leriris1.ismra.fr
A. Hairie
Affiliation:
Laboratoire d'Etudes et de Recherche sur les Matériaux, upresa cnrs 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France, valerie @ leriris1.ismra.fr
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherche sur les Matériaux, upresa cnrs 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France, valerie @ leriris1.ismra.fr
Get access

Abstract

AIN buffer and GaN layers grown on (0001) sapphire substrate by molecular beam epitaxy have been analysed by high resolution electron microscopy. They are found to be made of mosaic grains rotated around the c-axis by angles in the range of 0-20°. According to the value of the rotation angle, these boundaries can be classified as low-angle and high-angle grain boundaries. Some of these high-angle grain boundaries correspond to special misorientations which can be described in terms of coincidence site lattice. For one of these grains, the rotated angle is equal to 18.94° that is very close to the coincidence orientation, sigma = 31 with a rotation angle equal to 17.89°. This leads to a new epitaxial relationship (0001)sap// (0001)AIN and [1120]sap//[2130]AIN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 435
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).Google Scholar
[2] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, K. and Sugimoto, Y., Jpn. J. Appl. Phys. 66, L74 (1996).Google Scholar
[3] Herzog, J., J. Appl. Phys. 43, 600 (1972).Google Scholar
[4] Vermaut, P., Ruterana, P., Nouet, G. and Morkog, H., Phil. Mag A 75, 239 (1997).Google Scholar
[5] Potin, V., Ruterana, P. and Nouet, G., J. Appl. Phys. 82, 1276 (1997).Google Scholar
[6] Vennegues, P., Beaumont, B. and Gibart, P., Appl. Phys. Lett. 70, 2434 (1997).Google Scholar
[7] Chien, F. R., Ning, X. J., Stemmer, S., Pirouz, P., Bremser, M. D. and Davis, R. F., Appl. Phys. Lett. 68, 2678 (1996).Google Scholar
[8] Qian, W., Skowronski, M., De Graef, M., Doverspike, K., Rowland, L. B. and Gaskill, D. K., Appl. Phys. Lett. 66, 1252 (1995).Google Scholar
[9] Ning, X. J., Chien, F. R., Pirouz, P., Yang, J. W. and Khan, M. Asif, J. Mater. Res. 3, 580 (1996).Google Scholar
[10] Vennegues, P., Beaumont, B. and Gibart, P., J. Mater. Sci. Eng. B 43 (1997) 473.Google Scholar
[11] Selke, H., Einfeldt, S., Birkle, U., Hommel, D. and Ryder, P. L., Proceeding of the Xth Microscopy of Semiconducting Materials, Oxford (1997).Google Scholar
[12] Potin, V., Ruterana, P. and Nouet, G., Mater. Sci. Eng. B (in press).Google Scholar