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Low Temperature Thin-Film Microelectromechanical Devices on Plastic Substrates

Published online by Cambridge University Press:  17 March 2011

M. Boucinha
Affiliation:
Instituto de Engenharia de Sistemas e Computadores (INESC), R. Alves Redol, 9, 1000-029 Lisboa, Portugal
P. Brogueira
Affiliation:
Department of Physics, Instituto Superior Técnico (IST), Av. Rovisco Pais, 1049-001 Lisboa, Portugal
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores (INESC), R. Alves Redol, 9, 1000-029 Lisboa, Portugal
P. Alpuim
Affiliation:
Instituto de Engenharia de Sistemas e Computadores (INESC), R. Alves Redol, 9, 1000-029 Lisboa, Portugal
J. P. Conde
Affiliation:
Department of Materials Engineering, Instituto Superior Técnico (IST), Av. Rovisco Pais, 1049-001 Lisboa, Portugal
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Abstract

Air-gap micromachined structures such as bridges and cantilevers were fabricated on 50 and 125 µm-thick polyethylene terephthalate (PET) plastic substrates. The maximum processing temperature using PET is limited to 110 °C. Two surface micromachining processes on PET which used two different sacrificial layers - photoresist and Al - were developed. Several materials were used as structural layers in the microstructures including Al, TiW, amorphous silicon (a-Si:H) and a bilayer of a-Si:H and Al. The maximum length of free-standing bridges and cantilevers is discussed as a function of the fabrication process. The bridge structures were actuated electrostatically, in a DC switch setup configuration, and the critical voltage as a function of the length was measured. Mechanical actuation and optical detection were used, in an AC mode, for the measurement of the resonance frequency of bridge structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Maluf, N., An Introduction to Microelectromechanical Systems Engineering, Artech House, Norwood, MA, 2000.Google Scholar
[2] Baliga, J., Semiconductor International, March 1999, p. 34.Google Scholar
[3] Howe, R. T., Boser, B. E., Pisano, A. P., Sens. & Actuators A, 56, 167 (1996).Google Scholar
[4] Kwok, H. L., Electronic Materials, PWS Publishing, Boston, 1997.Google Scholar
[5] Cleland, A. N. and Roukas, M. L., Appl. Phys. Lett., 69, 2653 (1996).Google Scholar
[6] Vandelli, N., Wroblewski, D., Velonis, M., and Bifano, T., Journal of Microelectromechanical Systems, 7, 395 (1998).Google Scholar
[7] Sze, S. M., Semiconductor Sensors, John Wiley & Sons, New York, 1994. Google Scholar
[8] Boucinha, M., Chu, V., Conde, J. P., Appl. Phys. Lett., 73, 502 (1998).Google Scholar
[9] Boucinha, M., Chu, V., Alpuim, J. P., Conde, J. P., Sensors and Actuators,74, 5 (1999).Google Scholar
[10] Photoresist: PFR 7790G 27 cP (positive PR), JSR Electronics, Leuven, Belgium.Google Scholar
[11] Aluminum Etchant: 16:1:1:2 Aluminum Etch, ARTS, England.Google Scholar
[12] Gleskova, H., Wagner, S., IEEE Electron Dev. Lett., 20, 473 (1999).Google Scholar
[13] Boucinha, M., Chu, V., Soares, V., Conde, J. P., Mat. Res. Soc. Symp. Proc., 55, 799 (1999).Google Scholar
[14] de, H. J. Santos, Los, Introduction to Microelectromechanical (MEM) Microwave Systems, Artech House, Norwood, MA, 1999.Google Scholar
[15] Boucinha, M., Chu, V., Conde, J. P., presented at ICAMS 18, to be published in J. Non-Cryst. Solids.Google Scholar
[16] Weaver, W. Jr, Timoshenko, S. P., Young, D. H., Vibration Problems in Engineering, John Wiley & Sons, New York, NY, 1990.Google Scholar