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Low Temperature Syntheses of Nano-crystalline Silicon Film and Si Nanorods by Hot-Wire CVD

Published online by Cambridge University Press:  01 February 2011

Te-Chi Wong  and
Jih-Jen Wu
Te-Chi Wong
Affiliation:
Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Jih-Jen Wu
Affiliation:
Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Abstract

Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

Keywords

Nano-crystalline Silicon FilmsSilicon NanorodsLow Temperature GrowthHot-wire Chemical Vapor DepositionSiCl4 and Hydrogen
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A8.2
Copyright
Copyright © Materials Research Society 2002

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