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Low Temperature Selective Si and Si-Based Alloy Epitaxy For Advanced Transistor Applications

Published online by Cambridge University Press:  01 February 2011

Yihwan Kim ,
Ali Zojaji ,
Zhiyuan Ye ,
Andrew Lam ,
Nicholas Dalida ,
Errol Sanchez  and
Satheesh Kuppurao
Yihwan Kim
Affiliation:
Yihwan_Kim@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States, 408-584-1400
Ali Zojaji
Affiliation:
Ali_Zojaji@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States
Zhiyuan Ye
Affiliation:
Zhiyuan_Ye@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States
Andrew Lam
Affiliation:
Andrew_Lam@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States
Nicholas Dalida
Affiliation:
Nicholas_Dalida@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States
Errol Sanchez
Affiliation:
Errol_Sanchez@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States
Satheesh Kuppurao
Affiliation:
Satheesh_Kuppurao@amat.com, Applied Materials, Epi KPU, Front End Product Group, 974 E. Arques Ave., M/S 81288, Sunnyvale, California, 94085, United States
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Abstract

We have developed low temperature selective Si and Si-based alloy (SiGe and Si:C) epitaxy processes for advanced transistor fabrications. By lowering epitaxy process temperature (≤ 700 °C), we have demonstrated elevated source/drain formation on ultra-thin (< 50 Å) body SOI transistors without Si agglomeration, smooth morphology of selective SiGe epitaxy with high [Ge] (>30 %) and [B] (>2E20 cm-3) concentrations, and selective Si:C epitaxy with high substitutional C concentration (>1 %). Also, we have increased growth rate of low temperature selective epitaxy processes by optimizing process parameters by adapting non-conventional deposition method.

Keywords

epitaxychemical vapor deposition (CVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D04-05
Copyright
Copyright © Materials Research Society 2006

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