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Low Temperature Selective Area Chemical Vapor Deposition of Gold Films: Growth and Characterization

Published online by Cambridge University Press:  22 February 2011

Paul F. Seidler ,
Steven P. Kowalczyk ,
Mark M. Banaszak Holl ,
John J. Yurkas ,
Maurice H. Norcott  and
F. Read
Paul F. Seidler
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
Steven P. Kowalczyk
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
Mark M. Banaszak Holl
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
John J. Yurkas
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
Maurice H. Norcott
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
F. Read
Affiliation:
MCFEELY IBM Research Division, T. J. Watson Research Center, York town Heights, NY 10598.
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Abstract

Substrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 359
Copyright
Copyright © Materials Research Society 1993

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References

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