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Low Temperature Preparation of Gallium Nitride Thin Films

Published online by Cambridge University Press:  25 February 2011

Roy G. Gordon ,
David M. Hoffman  and
Umar Riaz
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, MA 02138
David M. Hoffman
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, MA 02138
Umar Riaz
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204
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Abstract

Gallium nitride thin films were prepared by atmospheric pressure chemical vapor deposition from hexakis(dimethylamido)digallium, Ga2(NMe2)6, and ammonia precursors at substrate temperatures of 100–400 °C with growth rates up to 1000 Å/min. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry and forward recoil spectrometry. The N/Ga ratio varied from 1.05 for films deposited at 400 °C to 1.5 at 100 °C. The hydrogen concentration increased from 10 atom % for films deposited at 400 °C to 24 atom % at 100 °C. Films deposited at 100 °C were amorphous but films deposited at higher temperatures were polycrystalline. Bandgaps of the films varied from 3.8 eV for films deposited at 400 °C to 4.2 eV at 100 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 445
Copyright
Copyright © Materials Research Society 1992

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References

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