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Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

Published online by Cambridge University Press:  25 February 2011

K. L. Tokuda ,
B. Pihlstrom ,
D. W. Kisker ,
M. Lamont Schnoes  and
G. J. Collins
K. L. Tokuda
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
B. Pihlstrom
Affiliation:
Dept. of Electrical Engineering, Colorado State Univ., Ft. Collins, CO 80523
D. W. Kisker
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
M. Lamont Schnoes
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
G. J. Collins
Affiliation:
Dept. of Electrical Engineering, Colorado State Univ., Ft. Collins, CO 80523
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Abstract

The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 239
Copyright
Copyright © Materials Research Society 1989

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References

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