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Low Temperature MOCVD of Thin Film PZT

Published online by Cambridge University Press:  10 February 2011

Ing-Shin Chen  and
Jeffery F. Roeder
Ing-Shin Chen
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Jeffery F. Roeder
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
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Abstract

Incorporation of ferroelectric thin films into integrated microelectronics requires deposition temperatures compatible with back-end processing. Pb(Zr,Ti)O3 (PZT) thin films have been deposited at low temperatures by a thermal chemical vapor deposition process using flash-vaporized metalorganic precursors. Deposition temperatures, A-site to B-site ratios in the precursor solution, and bottom electrodes have been surveyed. Stoichiometric perovskite films with (Zr/Ti) ratios ranging from 20/80 to 50/50 were obtained. Films deposited at temperatures below 500°C possess very fine grain structures. Capacitor structures were fabricated by depositing top electrodes using electron-beam evaporation, followed in some cases by a post-electrode anneal at 650°C. Remanent polarizations greater than 20 μC/cm2 were observed on films deposited on Pt at temperatures as low as 475°C. Perovskite films were obtained on Ir electrodes at temperatures as low as 450°C, with remanent polarization greater than 10μC/cm2 in the as-deposited condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 375
Copyright
Copyright © Materials Research Society 1999

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References

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