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Low Temperature Growth of Group II–A Fluoride Layers on Silicon as Buffer for Heteroepitaxial IV–VI and II–VI Compound Semiconductors

Published online by Cambridge University Press:  22 February 2011

S. Blunier ,
H. Zogg ,
A. N. Tiwari ,
C. Maissen ,
H. Weibel ,
T. Hoshino  and
S. Theodoropol
S. Blunier
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
H. Zogg
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
A. N. Tiwari
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
C. Maissen
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
H. Weibel
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
T. Hoshino
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
S. Theodoropol
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
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Abstract

We present our new development of low temperature (<450°C) MBE growth of group II-a fluorides on Si (111) and infrared sensor fabrication in Pb1−xSnxSe grown on such fluoride layers. The stacked CaF2-BaF2 buffer helps to overcome the large lattice and thermal mismatch between the Si-substrate and the narrow gap chalcogenide. Despite a rather nominal quality of the low temperature grown CaF2 layer, the 200nm thick epitaxial BaF2 top layer is of good structural perfection as judged from RBS channelling yield, RHEED-patterns and microscopy. The fluoride buffers were successfully overgrown with Pb1−xSnxSe and small IR-sensor arrays with up to 10.5μm cut-off wavelength were fabricated in the layers. The performance of these sensors is as good as for sensors fabricated with the high temperature buffer layer growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 531
Copyright
Copyright © Materials Research Society 1991

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References

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